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Institute of Electrical and Electronics Engineers, IEEE Journal of the Electron Devices Society, (11), p. 43-46, 2023

DOI: 10.1109/jeds.2022.3230402

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Investigation of Recovery Phenomena in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>-Based 1T1C FeRAM

This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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