Published in

Rsc, Materials Horizons, 10(9), p. 2633-2643, 2022

DOI: 10.1039/d2mh00632d

Proceedings of the Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics, 2022

DOI: 10.29363/nanoge.iperop.2023.012

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Grain Engineering for Improved Charge Carrier Transport in Two-Dimensional Lead-Free Perovskite Field-Effect Transistors

This paper was not found in any repository; the policy of its publisher is unknown or unclear.
This paper was not found in any repository; the policy of its publisher is unknown or unclear.

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Abstract

Controlling crystal growth and reducing the number of grain boundaries are crucial to maximize the charge carrier transport in organic–inorganic perovskite field-effect transistors (FETs).