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Springer, Journal of Materials Science: Materials in Electronics, 6(34), 2023

DOI: 10.1007/s10854-023-09945-z

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SiGe Fin field effect transistor (FET) with STI liner skipping and channel passivation engineering

Journal article published in 2023 by Chun Li, Yongliang Li ORCID, Anlan Chen, Fei Zhao, Jun Luo, Wenwu Wang
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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