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Chalcogenide Letters, 2(17), p. 41-47, 2020

DOI: 10.15251/cl.2020.172.41

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STRUCTURE OF Ge2Sb2Te5 THIN FILMS NEAR THE INFLECTION POINT OF THE RESISTIVITY TEMPERATURE DEPENDENCE

Journal article published in 2020 by Y. Zaytseva, P. Lazarenko ORCID, Y.-U. Vorobyov, A. Yakubov, N. Borgardt, S. Kozyukhin ORCID, A. Sherchenkov
This paper was not found in any repository; the policy of its publisher is unknown or unclear.
This paper was not found in any repository; the policy of its publisher is unknown or unclear.

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Abstract

We investigated Ge2Sb2Te5 thin films annealed at the temperatures specific to the crystallization process using transmission electron microscopy. The annealing temperatures typical for the inflection point (168 °C) of the temperature dependence of resistivity and at the end of the crystallization process (183 °С) were chosen for the TEM studies. These studies clearly showed that the inflection point on the temperature dependence of resistivity is identified with a two-stage character of Ge2Sb2Te5 thin films crystallization.