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Elsevier, Thin Solid Films, 1(139), p. 89-94

DOI: 10.1016/0040-6090(86)90051-9

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A comparative study of evaporated Al2O3, SiO2 and SiO2·Al2O3 thin films

Journal article published in 1986 by J. Vanfleteren ORCID, A. van Calster
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

A comparative study of several evaporated thin film dielectrics is presented. Measurements of the refractive index, density, etch rate, relative dielectric constant and dielectric loss factor tan δ were carried out. The dielectrics under investigation were Al2O3, SiO2 and mixtures of Al2O3 and SiO2. It was found that the properties of the dielectrics are strongly dependent on the tablets and powders used.