Published in
e-Prime - Advances in Electrical Engineering, Electronics and Energy, (3), p. 100114, 2023
DOI: 10.1016/j.prime.2023.100114
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High Al-content AlGaN channel high electron mobility transistors on silicon substrate
Journal article published in 2023 by
J. Mehta 
,
I. Abid,
J. Bassaler ,
J. Pernot,
P. Ferrandis ,
M. Nemoz ,
Y. Cordier,
S. Rennesson ,
S. Tamariz ,
F. Semond,
F. Medjdoub
,
I. Abid,
J. Bassaler ,
J. Pernot,
P. Ferrandis ,
M. Nemoz ,
Y. Cordier,
S. Rennesson ,
S. Tamariz ,
F. Semond,
F. Medjdoub
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