Published in
Elsevier, Materials Science in Semiconductor Processing, (146), p. 106666, 2022
DOI: 10.1016/j.mssp.2022.106666
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Enhanced luminescence property of GaN-based LEDs with p-InGaN cap layer grown on p-GaN surface
Journal article published in 2022 by
Lin Shang 
,
Bingshe Xu,
Shufang Ma,
Huican Ouyang,
Hengsheng Shan,
Xiaodong Hao ,
Bin Han
,
Bingshe Xu,
Shufang Ma,
Huican Ouyang,
Hengsheng Shan,
Xiaodong Hao ,
Bin Han
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