Integration of unconventional materials on established CMOS platforms requires to fulfill tight thermal budget constraints. However, low temperature processing may result in poor mechanical properties of the deposited films, which can exhibit stress-induced degradation of the optical properties or even delamination. This work focuses on a CMOS-compatible low-temperature deposition process for ZnS films on silicon and its use for the realization of an antireflection coating (ARC) operating in the medium infrared (MIR)–longwave infrared (LWIR) range. A thin interlayer of Al₂O₃ is employed to achieve good adhesion of a ZnS film deposited on Si by e-beam evaporation at room temperature. Numerical simulations are carried out to optimize the performance of single- and double-side ARC structures, quantifying the impact of the Al₂O₃ interlayer and of the fabrication tolerances on the optical transmission. Experimental results on an 8” silicon wafer demonstrate a peak transmittance of 66% for single-side ARC and 89% for a double-side ARC at a wavelength of 10 µm, resulting in an average transmission of 76.2% for black body radiation at 36 °C in the 6–20 μm wavelength range.