Abstract Ⅲ–Ⅴ semiconductor compound InSb with a zinc blende structure and extremely high electron mobility was grown as a thin film on SrTiO₃ (STO)(001) substrate by pulsed laser deposition. The growth of (111) oriented InSb was observed despite a large lattice mismatch of 1.6% ([1−10]_InSb ∣∣ [010]_STO) and 17.8% ([11−2]_InSb ∣∣ [100]_STO). Electron mobility of 94 cm² V⁻¹s⁻¹ at room temperature was confirmed by Hall effect measurement and the magnetic field reversal down to 1 Oe was detected. Growth of InSb/STO (001) thin film could be a promising approach for the detection of magnetic signals from various perovskite type functional oxide materials and will find applications in future devices.