AbstractPerovskite BiFe_0.9Co_0.1O₃ with electric‐field‐induced magnetization reversal is a promising material for low‐power non‐volatile memory devices because spontaneous magnetization perpendicular to the electric polarization can be reversed by out‐of‐plane polarization reversal. In this study, magnetic and ferroelectric domain changes in BiFe_0.9Co_0.1O₃ after applying an in‐plane electric field with counter electrodes fabricated by lithography is investigated. Electric poling can be performed up to 100 times via 71° polarization switching without disrupting the ferroelectric domains. It is determined that the correlation between the ferroelectric and magnetic domains is preserved, while in‐plane 71° polarization switching without reconstructing the ferroelectric domains does not change its out‐of‐plane magnetization. Lastly, possible differences in the antiferromagnetic spin vector and magnetization direction for in‐plane and out‐of‐plane 71° switching is discussed.