Published in
Royal Society of Chemistry, Nanoscale Advances, 17(4), p. 3549-3556, 2022
DOI: 10.1039/d2na00175f
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Low temperature 2D GaN growth on Si(111) 7 × 7 assisted by hyperthermal nitrogen ions
Journal article published in 2022 by
Jaroslav Maniš,
Miroslav Bartošík 
,
Jindřich Mach ,
Tomáš Šamořil,
Michal Horák ,
Vojtěch Čalkovský,
David Nezval,
Lukáš Kachtik,
Martin Konečný,
Tomáš Šikola
,
Jindřich Mach ,
Tomáš Šamořil,
Michal Horák ,
Vojtěch Čalkovský,
David Nezval,
Lukáš Kachtik,
Martin Konečný,
Tomáš Šikola
This paper is made freely available by the publisher.
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Abstract
As the characteristic dimensions of modern top-down devices are getting smaller, such devices reach their operational limits imposed by quantum mechanics.