Dissemin is shutting down on January 1st, 2025

Published in

Optica, Optica, 12(9), p. 1333, 2022

DOI: 10.1364/optica.471951

Links

Tools

Export citation

Search in Google Scholar

All-optical spin injection in silicon investigated by element-specific time-resolved Kerr effect

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Green circle
Preprint: archiving allowed
Green circle
Postprint: archiving allowed
Red circle
Published version: archiving forbidden
Data provided by SHERPA/RoMEO

Abstract

Understanding how a spin current flows across metal-semiconductor interfaces at pico- and femtosecond time scales is of paramount importance for ultrafast spintronics, data processing, and storage applications. However, the possibility to directly access the propagation of spin currents, within such time scales, has been hampered by the simultaneous lack of both ultrafast element-specific magnetic sensitive probes and tailored well-built and characterized metal-semiconductor interfaces. Here, by means of a novel free-electron laser-based element-sensitive ultrafast time-resolved Kerr spectroscopy, we reveal different magnetodynamics for the Ni M 2 , 3 and Si L 2 , 3 absorption edges. These results are assumed to be the experimental evidence of photoinduced spin currents propagating at a speed of ∼ 0.2 nm/fs across the Ni/Si interface.