Abstract We systematically study the performance of compact lumped element planar microwave Nb₇₀Ti₃₀N (NbTiN) resonators operating at 5 GHz in external in-plane magnetic fields up to 440 mT, a broad temperature regime from 2.2 K up to 13 K, as well as mK temperatures. For comparison, the resonators have been fabricated on thermally oxidized and pristine, (001) oriented silicon substrates. When operating the resonators in the multi-photon regime at T = 2.2 K, we find internal quality factors Q _int ≃ 2 × 10⁵ for NbTiN resonators grown on pristine Si substrates. In addition, we investigate the Q-factors of the resonators on pristine Si substrates at millikelvin temperatures to assess their applicability for quantum applications. We find Q _int ≃ 2 × 10⁵ in the single photon regime and Q _int ≃ 5 × 10⁵ in the high power regime at T = 7 mK. From the excellent performance of our resonators over a broad temperature and magnetic field range, we conclude that NbTiN deposited on Si (100) substrates, where the surface oxide has been removed, constitutes a promising material platform for electron spin resonance and ferromagnetic resonance experiments using superconducting planar microwave resonators.