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Published in

Optica, Optics Letters, 10(47), p. 2598, 2022

DOI: 10.1364/ol.455458

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Amorphous-silicon visible-light detector integrated on silicon nitride waveguides

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Visible-light integrated photonics is emerging as a promising technology for the realization of optical devices for applications in sensing, quantum information and communications, imaging, and displays. Among the existing photonic platforms, high-index-contrast silicon nitride (Si3N4) waveguides offer broadband transparency in the visible spectral range and a high scale of integration. As the complexity of photonic integrated circuits (PICs) increases, on-chip detectors are required to monitor their working point for reconfiguration and stabilization operations. In this Letter, we present a semi-transparent in-line power monitor integrated on Si3N4 waveguides that operates in the red-light wavelength range (660 nm). The proposed device exploits the photoconductivity of a hydrogenated amorphous-silicon (a-Si:H) film that is evanescently coupled to an optical waveguide. Experimental results show a responsivity of 30 mA/W, a sensitivity of –45 dBm, and a sub-µs time response. These features enable the use of the proposed photoconductor for high-sensitivity monitoring and control of visible-light Si3N4 PICs.