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GROWTH OF THE HIGH QUALITY SILICON NITRIDE FILMS IN LOW POWER NITROGEN AT TEMPERATURES BELOW 300 Degree C.

Proceedings article published in 1985 by K. Nauka, E. Paloura ORCID, J. Lagowski, H. C. Gatos
This paper was not found in any repository; the policy of its publisher is unknown or unclear.
This paper was not found in any repository; the policy of its publisher is unknown or unclear.

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