Published in
American Institute of Physics, Journal of Applied Physics, 24(130), p. 245703, 2021
DOI: 10.1063/5.0076980
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Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer
Journal article published in 2021 by
Joyce Ann T. de Guzman,
Vladimir P. Markevich,
Ian D. Hawkins,
José Coutinho 
,
Hussein M. Ayedh,
Jeff Binns,
Nikolay V. Abrosimov,
Stanislau B. Lastovskii,
Iain F. Crowe,
Matthew P. Halsall,
Anthony R. Peaker
,
Hussein M. Ayedh,
Jeff Binns,
Nikolay V. Abrosimov,
Stanislau B. Lastovskii,
Iain F. Crowe,
Matthew P. Halsall,
Anthony R. Peaker
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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