Published in

American Association for the Advancement of Science, Science, 6561(373), p. 1353-1358, 2021

DOI: 10.1126/science.abg3161

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2D materials–based homogeneous transistor-memory architecture for neuromorphic hardware

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Memory and logic in the same device Future artificial intelligence applications and data-intensive computations require the development of neuromorphic systems beyond traditional heterogeneous device architectures. Physical separation between a peripheral signal-processing unit and a memory-operating unit is one of the main bottlenecks of heterogeneous architectures, blocking further improvements in efficient resistance matching, energy consumption, and integration compatibility. Tong et al . present a transistor-memory architecture based on a homogeneous tungsten selenide-on-lithium niobate device array (see the Perspective by Rao and Tao). Analog peripheral signal preprocessing and nonvolatile memory were possible within the same device structure, promising diverse neuromorphic functionalities and offering potential improvements in neuromorphic systems on-chip. —YS