Published in
American Physical Society, Physical Review Applied, 2(15), 2021
DOI: 10.1103/physrevapplied.15.024046
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Tunnel Junctions with a Doped ( In,Ga)N Quantum Well for Vertical Integration of III -Nitride Optoelectronic Devices
Journal article published in 2021 by
M. Żak 
,
G. Muziol ,
H. Turski ,
M. Siekacz ,
K. Nowakowski-Szkudlarek ,
A. Feduniewicz-Żmuda ,
M. Chlipała ,
A. Lachowski ,
C. Skierbiszewski
,
G. Muziol ,
H. Turski ,
M. Siekacz ,
K. Nowakowski-Szkudlarek ,
A. Feduniewicz-Żmuda ,
M. Chlipała ,
A. Lachowski ,
C. Skierbiszewski
This paper was not found in any repository, but could be made available legally by the author.
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