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IOP Publishing, Applied Physics Express, 3(14), p. 033002, 2021

DOI: 10.35848/1882-0786/abdcd5

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Current-induced magnetization switching in a chemically disordered A1 CoPt single layer

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Abstract We report the first demonstration of current-induced magnetization switching in a perpendicularly magnetized A1 CoPt single layer. We show that good perpendicular magnetic anisotropy can be obtained over a wide composition range of A1 Co1−xPtx single layers, which allows the fabrication of a perpendicularly magnetized CoPt single layer with a composition gradient that breaks the inversion symmetry of the structure. By fabricating a CoPt single layer with a gradient, we were able to evaluate spin-orbit torque (SOT) efficiency and successfully realize SOT-induced magnetization switching. Our study provides an approach for realizing current-induced magnetization in ferromagnetic single layers without attaching SOT source materials.