Dissemin is shutting down on January 1st, 2025

Published in

Optica, Optics Express, 3(29), p. 2940, 2021

DOI: 10.1364/oe.405364

Links

Tools

Export citation

Search in Google Scholar

Low-power and high-detectivity Ge photodiodes by in-situ heavy As doping during Ge-on-Si seed layer growth

Journal article published in 2021 by Yiding Lin ORCID, Kwang Hong Lee ORCID, Bongkwon Son ORCID, Chuan Seng Tan
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

Full text: Download

Red circle
Preprint: archiving forbidden
Green circle
Postprint: archiving allowed
Green circle
Published version: archiving allowed
Data provided by SHERPA/RoMEO

Abstract

Germanium (Ge)-based photodetectors have become one of the mainstream components in photonic-integrated circuits (PICs). Many emerging PIC applications require the photodetectors to have high detectivity and low power consumption. Herein, we demonstrate high-detectivity Ge vertical p-i-n photodiodes on an in-situ heavily arsenic (As)-doped Ge-on-Si platform. The As doping was incorporated during the initial Ge-on-Si seed layer growth. The grown film exhibits an insignificant up-diffusion of the As dopants. The design results in a ∼45× reduction on the dark current and consequently a ∼5× enhancement on the specific detectivity (D*) at low reverse bias. The improvements are mainly attributed to the improved epi-Ge crystal quality and the narrowing of the device junction depletion width. Furthermore, a significant deviation on the AsH3 flow finds a negligible effect on the D* enhancement. This unconventional but low-cost approach provides an alternative solution for future high-detectivity and low-power photodiodes in PICs. This method can be extended to the use of other n-type dopants (e.g., phosphorus (P) and antimony (Sb)) as well as to the design of other types of photodiodes (e.g., waveguide-integrated).