Published in

Trans Tech Publications, Key Engineering Materials, (871), p. 243-247, 2021

DOI: 10.4028/www.scientific.net/kem.871.243

Links

Tools

Export citation

Search in Google Scholar

The Distribution Trend of Boron Atoms in Semiconductor Silicon under High Temperature

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Red circle
Preprint: archiving forbidden
Red circle
Postprint: archiving forbidden
Green circle
Published version: archiving allowed
Data provided by SHERPA/RoMEO

Abstract

The ProENGINEER software is used to build a geometric model for the whole process cavity and internal structure and conduct the internal dynamic simulation of cavity with different diffusion temperatures of 1,000°C, 1,050°C, 1,100°C and 1,150°C, and different diffusion time of 5 min, 10 min, 15 min and 20 min. Analyze the process control indexes by combining with specific thermal diffusion test, and study the relationship between hydrodynamic parameters and diffusion uniformity, Comprehensively investigate the effects of the diffusion temperature and diffusion time on doping, achieving the requirements of impurity distribution in materials.