These years, electronic devices and integrated circuits have a trend of miniaturization and integration with the rapid development of the information industry, higher requirements have been placed on the size, purity, and defect density of silicon wafers. More urgent demands have been placed on the mass production of electronic grade polysilicon. However, the research of electronic grade polysilicon in China is still in its infancy, it is far from meeting the requirements of mass production. This paper studies the influence of the single factor of reaction temperature on the yield of silicon, the surface morphology and power consumption of polysilicon under the certain conditions, which has some reference value for the production of electronic grade polysilicon.