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Trans Tech Publications, Applied Mechanics and Materials, (336-338), p. 1445-1448, 2013

DOI: 10.4028/www.scientific.net/amm.336-338.1445

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Research on Switching Performance of Static Induction Thyristors

Journal article published in 2013 by Cai Zhen Zhang, Yong Gang Chen, Yong Shun Wang
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Physical mechanism for switching state of SITHs was discussed, the two-dimensional turn-off model was proposed, expressions of ton and toffwere mathematical derived. Measures to reduce the switching time of SITHs, such as reducing the gate width WG and n- region width Wn-, doping Boron atoms with higher density,etc.,were put forward and verified by experiments.