Published in

IOP Publishing, Journal of Physics: Condensed Matter, 12(33), p. 12LT01, 2021

DOI: 10.1088/1361-648x/abd738

Links

Tools

Export citation

Search in Google Scholar

Femtometer atomic displacement, the root cause for multiferroic behavior of CuO unearthed through polarized Raman spectroscopy

Journal article published in 2020 by Binoy Krishna De, Vivek Dwij, R. Misawa, Tsuyoshi Kimura ORCID, Vasant G. Sathe ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Green circle
Preprint: archiving allowed
Orange circle
Postprint: archiving restricted
Red circle
Published version: archiving forbidden
Data provided by SHERPA/RoMEO

Abstract

Abstract Recently, CuO has been proposed as a potential multiferroic material with high transition temperature. Competing models based on spin current and ionic displacements are invoked to explain ferroelectricity in CuO. The theoretical model based on ionic displacement predicted very small displacement (∼10−5 Å) along the b axis. Experimentally detecting displacements of such a small amplitude in a particular direction is extremely challenging. Through our detailed angle resolved polarized Raman spectroscopy study on single crystal of CuO, we have validated the theoretical study and provided direct evidence of displacement along the b axis. Our study provides important contribution in the high temperature multiferroic compounds and showed for the first time, the use of the polarized Raman scattering in detecting ionic displacements at the femtometer scale.