Published in
American Institute of Physics, Applied Physics Letters, 26(117), p. 262108, 2020
DOI: 10.1063/5.0029295
Links
Tools
Carrier capture kinetics, deep levels, and isolation properties of β-Ga2O3 Schottky-barrier diodes damaged by nitrogen implantation
Journal article published in 2020 by
C. De Santi 
,
M. Fregolent ,
M. Buffolo ,
M. H. Wong ,
M. Higashiwaki ,
G. Meneghesso ,
E. Zanoni ,
M. Meneghini
,
M. Fregolent ,
M. Buffolo ,
M. H. Wong ,
M. Higashiwaki ,
G. Meneghesso ,
E. Zanoni ,
M. Meneghini
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Data provided by 