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2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2020

DOI: 10.1109/icsict49897.2020.9278269

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Influence of Gate-Drain Underlap Length on Germanium Gate-All-Around Tunneling Field-Effect-Transistors

Proceedings article published in 2020 by Kai-Xiao Wei, Xiao-Jin Li, Ya-Bin Sun, Yan-Ling Shi
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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