Published in
Elsevier, Microelectronics Reliability, (114), p. 113786, 2020
DOI: 10.1016/j.microrel.2020.113786
Links
Tools
Degradation mechanisms in high power InGaN semiconductor lasers investigated by electrical, optical, spectral and C-DLTS measurements
Journal article published in 2020 by
F. Piva 
,
C. De Santi,
M. Buffolo,
M. Taffarel,
G. Meneghesso,
E. Zanoni,
M. Meneghini
,
C. De Santi,
M. Buffolo,
M. Taffarel,
G. Meneghesso,
E. Zanoni,
M. Meneghini
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Published version:
archiving forbidden
Data provided by 