Published in
Institute of Electrical and Electronics Engineers, IEEE Transactions on Magnetics, 3(57), p. 1-9, 2021
DOI: 10.1109/tmag.2020.3038110
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40 nm 1T–1MTJ 128 Mb STT-MRAM With Novel Averaged Reference Voltage Generator Based on Detailed Analysis of Scaled-Down Memory Cell Array Design
Journal article published in 2021 by
Hiroki Koike 
,
Takaho Tanigawa,
Toshinari Watanabe,
Takashi Nasuno,
Yasuo Noguchi,
Mitsuo Yasuhira,
Toru Yoshiduka,
Yitao Ma ,
Hiroaki Honjo ,
Koichi Nishioka ,
Sadahiko Miura ,
Hirofumi Inoue,
Shoji Ikeda ,
Tetsuo Endoh
,
Takaho Tanigawa,
Toshinari Watanabe,
Takashi Nasuno,
Yasuo Noguchi,
Mitsuo Yasuhira,
Toru Yoshiduka,
Yitao Ma ,
Hiroaki Honjo ,
Koichi Nishioka ,
Sadahiko Miura ,
Hirofumi Inoue,
Shoji Ikeda ,
Tetsuo Endoh
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