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Trans Tech Publications, Materials Science Forum, (1014), p. 3-7, 2020

DOI: 10.4028/www.scientific.net/msf.1014.3

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Elimination of Silicon Droplets Formation during 4H-SiC Epitaxial Growth by Chloride-Based CVD in a Vertical Hot-Wall Reactor

Journal article published in 2020 by Chuan Gang Li, Tao Ju, Li Guo Zhang, Xiang Kan, Xuan Zhang ORCID, Juan Qin, Bao Shun Zhang, Ze Hong Zhang
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

The growth pits formed during 5-10 μm 4H-SiC epitaxial growth by a home-built vertical hot-wall CVD reactor are investigated and their formation mechanisms are discussed. The origin of the growth pits is believed to be the silicon droplets related to the unoptimized growth condition. The growth pits are successfully removed by adding more HCl to the in-situ etching stage and the after-growth cooling stage.