Published in
American Institute of Physics, Applied Physics Letters, 19(117), p. 193502, 2020
DOI: 10.1063/5.0029286
Links
Tools
Reduction in leakage current through interface between Ga2O3 epitaxial layer and substrate by ion implantation doping of compensating impurities
Journal article published in 2020 by
Sandeep Kumar 
,
Takafumi Kamimura ,
Chia-Hung Lin ,
Yoshiaki Nakata,
Masataka Higashiwaki
,
Takafumi Kamimura ,
Chia-Hung Lin ,
Yoshiaki Nakata,
Masataka Higashiwaki
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Data provided by 