Mixed-halide perovskite allows to realize conception of light-emitting solar cell (LESC) due to possibility to in-situ change device band structure by formation of dipole layer under applied voltage and intrinsic properties of perovskite ions. LESC has optimized perovskite-based solar cell (SC) architecture, but light-emitting diode (LED) regime performances is still low. Defect passivation can improve LED efficiencies due to reducing nonradiative recombination via defect levels. Solvent annealing allows to regulate film formation process and leads to better morphology and grain size for our application. Defect density is significantly reduced due to this passivation method. Here we demonstrate effect of annealing in vapors of dimethylformamide (DMF), dimethyl sulfoxide (DMSO) and acetonitrile (MeCN) atmosphere on LESC photovoltaic characteristic, electroluminescence (EL) peak wavelength and photoluminescence quantum yield (PLQY) of mixed-halide perovskite film.