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Published in

The Electrochemical Society, ECS Journal of Solid State Science and Technology, 10(9), p. 105005, 2020

DOI: 10.1149/2162-8777/abc6ef

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Incorporation of Zinc Oxide on Macroporous Silicon Enhanced the Sensitivity of Macroporous Silicon MSM Photodetector

This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

In this study, metal-semiconductor-metal (MSM) photodetectors (PDs) was fabricated on the macroporous silicon substrate, (mPS) followed by growth of zinc oxide (ZnO) on the mPS substrate (ZnO/mPS) with addition of nickel (Ni) contact in finger mask pattern. The mPS was formed by electrochemical etching technique with an estimated etching time of 15 min by a continuous current flow of 25 mA. The ZnO nanostructures were synthesized by cost-effective chemical bath deposition (CBD) process. Field Effect Scanning Electron Microscopy (FESEM) and X-ray Diffractometer (XRD) revealed the randomly distributed of upper-morphologies and crystalline properties of x-shaped mPS as well as the distribution of ZnO/mPS. A good Schottky contact with superior photoconductivity, photo-responsivity, and photo-sensitivity have been demonstrated from these MSM PDs under illumination of 383 nm and 422 nm light sources. An enhanced photoconductivity at 422 nm had been demonstrated from Ni/ZnO/mPS/Ni PD which was believed due to the incorporation of energy properties at ZnO/mPS interface with a greater energy band gap of 3.15 eV. The responsivity of Ni/mPS/Ni PD at 383 nm and 422 nm were 0.088 A W−1 and 0.171 A W−1, respectively. While the Ni/ZnO/mPS/Ni PD shows the double photo-responsivity for both wavelengths, with the values of 0.160 A W−1 and 0.385 A W−1, respectively. In overall, the incorporation of ZnO/mPS structure drawn a great significance in PDs performance due to unique tunable photo-responsivity, higher sensitivity, and faster rise and decay time which attributed to the swift recombination process.