Published in
American Institute of Physics, Applied Physics Letters, 17(117), p. 172106, 2020
DOI: 10.1063/5.0025970
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Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga2O3
Journal article published in 2020 by
Hemant Ghadi,
Joe F. McGlone 
,
Zixuan Feng,
A. F. M. Anhar Uddin Bhuiyan ,
Hongping Zhao ,
Aaron R. Arehart ,
Steven A. Ringel
,
Zixuan Feng,
A. F. M. Anhar Uddin Bhuiyan ,
Hongping Zhao ,
Aaron R. Arehart ,
Steven A. Ringel
This paper was not found in any repository, but could be made available legally by the author.
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