Excellent Mechanical Durability of In‐Folding Stress of Poly‐Si Thin‐Film Transistor on Plastic Substrate Compared with Out‐Folding: Generation of Gate Leakage Currents in Flexible Poly‐Si Thin‐Film Transistor by Out‐Folding and Bias‐Temperature Stress
Journal article published in 2020 by
Dongjin Kim,
Mohammad Masum Billah,
Suhui Lee,
Abu Bakar Siddik 
,
Young Joo Cho,
Jin Jang ,
Jaeseob Lee,
Yongsu Lee,
Jiyeong Shin
,
Young Joo Cho,
Jin Jang ,
Jaeseob Lee,
Yongsu Lee,
Jiyeong Shin
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