Published in
2020 IEEE/MTT-S International Microwave Symposium (IMS), 2020
DOI: 10.1109/ims30576.2020.9224061
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InAlN/GaN-on-Si HEMT with 4.5 W/mm in a 200-mm CMOS-Compatible MMIC Process for 3D Integration
Proceedings article published in 2020 by
Shireen Warnock,
Chang-Lee Chen,
Jeffrey Knechtl,
Richard Molnar,
Donna-Ruth Yost,
Matthew Cook,
Corey Stull,
Ryan Johnson,
Christopher Galbraith,
Jeffrey Daulton 
,
WeiLin Hu,
Gianni Pinelli,
Joshua Perozek,
Tomas Palacios,
Beijia Zhang
and other authors.
,
WeiLin Hu,
Gianni Pinelli,
Joshua Perozek,
Tomas Palacios,
Beijia Zhang
and other authors.
This paper was not found in any repository, but could be made available legally by the author.
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