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Optica, Optics Express, 11(21), p. 13219, 2013

DOI: 10.1364/oe.21.013219

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Silicon-organic hybrid (SOH) IQ modulator using the linear electro-optic effect for transmitting 16QAM at 112 Gbit/s

Journal article published in 2013 by Dietmar Korn, Robert Palmer, Hui Yu, Pc Schindler, Luca Alloatti ORCID, Moritz Baier, René Schmogrow, Wim Bogaerts, Sk Selvaraja, Guy Lepage, Marianna Pantouvaki, Jmd Wouters, Peter Verheyen, Joris Van Campenhout, Bq Chen and other authors.
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

Advanced modulation formats call for suitable IQ modulators. Using the silicon-on-insulator (SOI) platform we exploit the linear electro-optic effect by functionalizing a photonic integrated circuit with an organic χ(2)-nonlinear cladding. We demonstrate that this silicon-organic hybrid (SOH) technology allows the fabrication of IQ modulators for generating 16QAM signals with data rates up to 112 Gbit/s. To the best of our knowledge, this is the highest single-polarization data rate achieved so far with a silicon-integrated modulator. We found an energy consumption of 640 fJ/bit.