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American Institute of Physics, Applied Physics Letters, 14(117), p. 143101, 2020

DOI: 10.1063/5.0023531

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Monolayer 1T-LaN2: Dirac spin-gapless semiconductor of p-state and Chern insulator with a high Chern number

Journal article published in 2020 by Linyang Li ORCID, Xiangru Kong ORCID, Xin Chen ORCID, Jia Li ORCID, Biplab Sanyal ORCID, François M. Peeters ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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