Published in
American Institute of Physics, Applied Physics Letters, 14(117), p. 143101, 2020
DOI: 10.1063/5.0023531
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Monolayer 1T-LaN2: Dirac spin-gapless semiconductor of p-state and Chern insulator with a high Chern number
Journal article published in 2020 by
Linyang Li 
,
Xiangru Kong ,
Xin Chen ,
Jia Li ,
Biplab Sanyal ,
François M. Peeters
,
Xiangru Kong ,
Xin Chen ,
Jia Li ,
Biplab Sanyal ,
François M. Peeters
This paper was not found in any repository, but could be made available legally by the author.
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