In this study, a 5-nm thick Al2O3 layer was patterned onto the Mo electrode in the form of a dot to produce a local rear contact, which looked at the effects of this contact structure on Cu2ZnSn(S1-xSex)4 (CZTSSe) growth and solar cell devices. Mo was partially exposed through open holes having a square dot shape, and the closed-ratios of Al2O3 passivated areas were 56%, 75%, and 84%. The process of synthesizing CZTSSe is the same as that of the previous process showing 12.62% efficiency. When the 5-nm-Al2O3 dot patterning was applied to the Mo surface, we observed that the MoSSe formation was well suppressed under the area coated of 5-nm-Al2O3 film. The self-alignment phenomenon was observed in the back-contact area. CZTSSe was easily formed in the Mo-exposed area, while voids were formed near the Al2O3-coated area. The efficiency of the CZTSSe solar cell decreased when the Al2O3 passivated area increased. The exposure area and pitch of Mo, the collecting path of the hole, and the supplying path of Na seemed to be related to efficiency. Thus, it was suggested that the optimization of the Mo-exposed pattern and the additional Na supply are necessary to develop the optimum self-aligned CZTSSe light absorber.