Abstract In recent years, the organic-inorganic perovskite materials have revolutionized the Photovoltaic industry with highly efficient power conversion devices accompanied by a high growth rate. However, these devices experience major environmental and stability issues that hinder their true potential. More recently, a rarely studied perovskite material Cs₂SnI₆ is gaining enormous attention due to its superior stability and suitable bandgap. In this work, we developed a modified two-step process to prepare uniform Cs₂SnI₆ films, and the influence of the reaction conditions on the properties is explored. The structural, morphological, optical, and electrical properties of the prepared films were investigated using x-ray diffraction, Raman spectroscopy, scanning electron microscopy, UV–vis spectrometer, photoluminescence, and Hall Effect measurements, respectively. Phase stability and morphology of the films are improved with optimizing the reaction conditions. The results confirm the n-type semiconductor nature of Cs₂SnI₆ with bandgap ranging from 1.29 eV to 1.42 eV with maximum carrier mobility of 425 cm² V⁻¹ s⁻¹. The present study will further provide potential research directions in improving the device efficiency of air-stable Cs₂SnI₆ perovskite solar cells.