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IOP Publishing, Nanotechnology, 2(32), p. 020002, 2020

DOI: 10.1088/1361-6528/abbc24

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Measurements of anisotropic g-factors for electrons in InSb nanowire quantum dots

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Abstract We have measured the Zeeman splitting of quantum levels in few-electron quantum dots (QDs) formed in narrow bandgap InSb nanowires via the Schottky barriers at the contacts under application of different spatially orientated magnetic fields. The effective g-factor tensor extracted from the measurements is strongly anisotropic and level-dependent, which can be attributed to the presence of strong spin–orbit interaction (SOI) and asymmetric quantum confinement potentials in the QDs. We have demonstrated a successful determination of the principal values and the principal axis orientations of the g-factor tensors in an InSb nanowire QD by the measurements under rotations of a magnetic field in the three orthogonal planes. We also examine the magnetic field evolution of the excitation spectra in an InSb nanowire QD and extract a SOI strength of Δ s o ∼ 180 μeV from an avoided level crossing between a ground state and its neighboring first excited state in the QD.