Published in
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2020
DOI: 10.1109/vlsi-tsa48913.2020.9203689
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Empirical Tunneling Model Describing the Retention of 2.5 Mb HfO2 based ReRAM
Proceedings article published in 2020 by
S. Wiefels 
,
U. Bottger,
S. Menzel,
D. J. Wouters,
R. Waser
,
U. Bottger,
S. Menzel,
D. J. Wouters,
R. Waser
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