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American Chemical Society, ACS Applied Electronic Materials, 9(2), p. 2730-2738, 2020

DOI: 10.1021/acsaelm.0c00450

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Epitaxial high-yield intrinsic and Te-doped dilute nitride GaAsSbN nanowire heterostructure and ensemble photodetector application.

Journal article published in 2020 by Rabin Pokharel, Priyanka Ramaswamy, Shisir Devkota, Mehul Parakh, Kendall Dawkins, Aubrey N. Penn ORCID, Matthew Cabral ORCID, Lewis Reynolds, Shanthi Iyer ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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