Published in
American Institute of Physics, Journal of Applied Physics, 7(128), p. 075705, 2020
DOI: 10.1063/5.0014407
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Monitoring the Joule heating profile of GaN/SiC high electron mobility transistors via cross-sectional thermal imaging
Journal article published in 2020 by
G. Pavlidis 
,
A. M. Hilton,
J. L. Brown,
E. R. Heller ,
S. Graham
,
A. M. Hilton,
J. L. Brown,
E. R. Heller ,
S. Graham
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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