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American Chemical Society, ACS Applied Electronic Materials, 9(2), p. 2780-2787, 2020

DOI: 10.1021/acsaelm.0c00480

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HfO<sub>2</sub>–Al<sub>2</sub>O<sub>3</sub> Dielectric Layer for a Performing Metal–Ferroelectric–Insulator–Semiconductor Structure with a Ferroelectric 0.5Ba(Zr<sub>0.2</sub>Ti<sub>0.8</sub>)O<sub>3</sub>-0.5(Ba<sub>0.7</sub>Ca<sub>0.3</sub>)TiO<sub>3</sub> Thin Film

Journal article published in 2020 by José P. B. Silva, Koppole C. Sekhar, Katerina Veltruská, Vladimir Matolín, Raluca F. Negrea, Corneliu Ghica, Marcelo J. S. Oliveira, Joaquim Agostinho Moreira ORCID, Mário Pereira, Maria J. M. Gomes
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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