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American Institute of Physics, Applied Physics Letters, 16(96), p. 162107

DOI: 10.1063/1.3409223

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Gate-defined double quantum dot with integrated charge sensors realized in InGaAs/InP by incorporating a high- κ dielectric

Journal article published in 2010 by Jie Sun ORCID, Marcus Larsson, Ivan Maximov ORCID, H. Q. Xu ORCID
This paper is available in a repository.
This paper is available in a repository.

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Abstract

A gate-defined double quantum dot with two integrated quantum point contact charge sensors is realized in an InGaAs/InP heterostructure by employing a high-kappa HfO2 thin film as gate dielectric and a polymer bridge technique. Clear honeycomb patterns are observed in the measured charge stability diagram of the double quantum dot and charge sensing signals of the quantum point contacts. It is also found that the quantum point contact charge sensors can detect the charge states in the double quantum dot even in the condition that the direct transport signal is not visible.