Published in
American Institute of Physics, Applied Physics Letters, 26(116), p. 269901, 2020
DOI: 10.1063/5.0017925
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Publisher's Note: “Oxidized Si terminated diamond and its MOSFET operation with SiO2 gate insulator” [Appl. Phys. Lett. 116, 212103 (2020)]
Journal article published in 2020 by
Wenxi Fei 
,
Te Bi,
Masayuki Iwataki,
Shoichiro Imanishi ,
Hiroshi Kawarada
,
Te Bi,
Masayuki Iwataki,
Shoichiro Imanishi ,
Hiroshi Kawarada
This paper was not found in any repository, but could be made available legally by the author.
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