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American Institute of Physics, Journal of Applied Physics, 14(116), p. 143103, 2014

DOI: 10.1063/1.4897449

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Optical properties of magnesium doped $Al_{x}Ga_{1−x}N$ (0.61 ≤ x ≤ 0.73)

Journal article published in 2014 by Martin Feneberg ORCID, Sarah Osterburg, María Fátima Romero, Bernd Garke, Rüdiger Goldhahn ORCID, Maciej D. Neumann, Norbert Esser, Jianchang Yan, Jianping Zeng, Junxi Wang, Jinmin Li
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This paper is available in a repository.

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Abstract

We investigate the optical properties of Al x Ga1– x N:Mg with aluminum content of 0.61 ≤ x ≤ 0.733 in comparison to undoped and silicon doped reference samples. The ordinary dielectric functions, excitation, and emission spectra are reported at different temperatures. A comprehensive analysis yields quantitative data on the valence band structure of the ternary alloy, i.e., splitting and order of valence bands with different symmetries. Finally, the near band gap emission in AlGaN:Mg is found to be most probably dominated by donor to free-hole recombination.