Published in
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2020
DOI: 10.1109/edtm47692.2020.9117894
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Vertical Gallium Oxide Transistors with Current Aperture Formed Using Nitrogen-Ion Implantation Process
Proceedings article published in 2020 by
Masataka Higashiwaki 
,
Man Hoi Wong,
Ken Goto,
Hisashi Murakami,
Yoshinao Kumagai
,
Man Hoi Wong,
Ken Goto,
Hisashi Murakami,
Yoshinao Kumagai
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