Published in

Institute of Electrical and Electronics Engineers, IEEE Transactions on Electron Devices, 8(67), p. 3049-3055, 2020

DOI: 10.1109/ted.2020.2998442

Links

Tools

Export citation

Search in Google Scholar

Performance Evaluation and Device Physics Investigation of Negative-Capacitance MOSFETs Based on Ultrathin Body Silicon and Monolayer MoS₂

Journal article published in 2020 by Sheng Luo, Xiaoyi Zhang ORCID, Gengchiau Liang ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Green circle
Preprint: archiving allowed
Green circle
Postprint: archiving allowed
Red circle
Published version: archiving forbidden
Data provided by SHERPA/RoMEO