Published in
American Institute of Physics, Journal of Applied Physics, 21(127), p. 215707, 2020
DOI: 10.1063/5.0008758
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Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices
Journal article published in 2020 by
Yuxuan Zhang 
,
Zhaoying Chen,
Wenbo Li ,
Hyunsoo Lee ,
Md Rezaul Karim ,
Aaron R. Arehart ,
Steven A. Ringel,
Siddharth Rajan,
Hongping Zhao
,
Zhaoying Chen,
Wenbo Li ,
Hyunsoo Lee ,
Md Rezaul Karim ,
Aaron R. Arehart ,
Steven A. Ringel,
Siddharth Rajan,
Hongping Zhao
This paper was not found in any repository, but could be made available legally by the author.
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